Exploiting Domain Wall Conduction in Nitride Ferroelectrics As A New Type of Memristive FeRAM (Kiel Univ., Fraunhofer, NaMLab, TU Dresden)

A new technical paper titled “Nitride Ferroelectric Domain Wall Memory for Next-Generation Computing” was published by researchers at Kiel University, Fraunhofer Institute for Silicon Technology (ISIT), NaMLab, and TU Dresden. Abstract “The emerging nitride ferroelectrics, such as Al1-xScxN promise to significantly advance our current information technology. In particular, two-terminal memristive devices are ideal candidates for artificial... » read more
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